unisonic technologies co., ltd UTM4052 power mosfet www.unisonic.com.tw 1 of 9 copyright ? 2010 unisonic technologies co., ltd qw-r502-137.e dual enhancement mode (n-channel/p-channel) ? features * n-channel: 40v/7.5a r ds(on) = 30 m ? (typ.) @ v gs =10v r ds(on) = 46 m ? (typ.) @ v gs = 5v * p-channel: -40v/-6a r ds(on) = 45 m ? (typ.) @ v gs = -10v r ds(on) = 52 m ? (typ.) @ v gs = -5v * super high dense cell design * reliable and rugged ? symbol d g2 g1 s1 s2 n-channel p-channel sop-8 to-252-4 1 ? ordering information ordering number pin assignment lead free halogen free package 1. 2. 3. 4. 5. 6. 7. 8. packing UTM4052l-s08-r UTM4052g-s08-r sop-8 s1 g1 s2 g2 d d d d tape reel UTM4052l-tn4-r UTM4052g-tn4-r to-252-4 s1 g1 d s2 g2 - - - tape reel UTM4052l-tn4-t UTM4052g-tn4-t to-252-4 s1 g1 d s2 g2 - - - tube
UTM4052 power mosfet unisonic technologies co., ltd 2 of 9 www.unisonic.com.tw qw-r502-137.e ? pin configuration source 1 gate 1 source 2 drain drain drain drain 8 7 6 5 4 3 2 1 sop-8 gate 2 1 2 3 4 5 to-252-4 source 1 gate 1 drain source 2 gate 2
UTM4052 power mosfet unisonic technologies co., ltd 3 of 9 www.unisonic.com.tw qw-r502-137.e ? absolute maximum ratings (ta=25c unless otherwise specified) n-channel parameter symbol ratings unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current (note 2) t c =25c i d 7.5 a pulsed drain current (note 2) t c =25c i dm 30 a sop-8 3.1 w power dissipation (t c =25c) to-252-4 p d 25 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c p-channel parameter symbol ratings unit drain-source voltage v ds -40 v gate-source voltage v gs 20 v continuous drain current (note 2) t c =25c i d -6 a pulsed drain current (note 2) t c =25c i dm -25 a sop-8 3.1 w power dissipation (t c =25c) to-252-4 p d 25 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. surface mounted on 1in 2 pad area, t 10sec. ? thermal data parameter symbol ratings unit sop-8 78 c/w junction to ambient (note) to-252-4 ja 50 c/w sop-8 40 c/w junction to case to-252-4 jc 5 c/w note: surface mounted on 1in 2 pad area, t 10sec.
UTM4052 power mosfet unisonic technologies co., ltd 4 of 9 www.unisonic.com.tw qw-r502-137.e ? electrical characteristics (t a =25c, unless otherwise specified) n-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250ua 40 v drain-source leakage current i dss v ds =32v, v gs =0v 1 ua gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250ua 1.3 2 2.5 v v gs =10v, i d =7.5a 30 38 m ? drain-source on-state resistance (note2) r ds(on) v gs =5v, i d =5a 46 62 m ? dynamic characteristics input capacitance c iss 480 pf output capacitance c oss 70 pf reverse transfer capacitance c rss v gs =0v,v ds =20v,f=1.0mhz 50 pf switching characteristics turn-on delay time (note2) t d(on) 7 14 ns turn-on rise time t r 10 19 ns turn-off delay time t d(off) 17 32 ns turn-off fall time t f v ds =20v, v gs =10v, i d =1a, r g =6 ? , r l =20 ? 3 6 ns total gate charge (note2) q g 17 24 nc gate-source charge q gs 2.2 nc gate-drain charge q gd v ds =20v, v gs =10v, i d =7.5a 4 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd t j =25 , i s =2a, v gs =0v 0.8 1.1 v diode continuous forward current (note3) i s 20 a reverse recovery time t rr 21 ns reverse recovery charge q rr i ds =7.5a, di/dt=100a/ s 16 nc p-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250ua -40 v drain-source leakage current i dss v ds =-32v, v gs =0v -1 ua gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250ua -1.3 -2 -2.5 v v gs =-10v, i d =-6a 45 50 m ? drain-source on-state resistance (note2) r ds(on) v gs =-5v, i d =-3.5a 52 73 m ? dynamic characteristics input capacitance c iss 970 pf output capacitance c oss 100 pf reverse transfer capacitance c rss v gs =0v,v ds =-20v,f=1.0mhz 70 pf switching characteristics turn-on delay time (note2) t d(on) 5 10 ns turn-on rise time t r 11 21 ns turn-off delay time t d(off) 37 68 ns turn-off fall time t f v ds =-20v, v gs =-10v, i d =-1a, r g =6 ? , r l =20 ? 12 23 ns total gate charge (note2) q g 17 24 nc gate-source charge q gs 2.2 nc gate-drain charge q gd v ds =-20v, v gs =-10v, i d =-6a 4 nc
UTM4052 power mosfet unisonic technologies co., ltd 5 of 9 www.unisonic.com.tw qw-r502-137.e ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd t j =25 , i s =-2a, v gs =0v -0.8 -1.1 v diode continuous forward current (note3) i s -18 a reverse recovery time t rr 17 ns reverse recovery charge q rr i ds =-6a, di/dt=100a/ s 10 nc notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%. 3. surface mounted on 1in 2 pad area, t 10sec .
UTM4052 power mosfet unisonic technologies co., ltd 6 of 9 www.unisonic.com.tw qw-r502-137.e ? typical characteristics n-channel normalizedtransient thermal resistance r ds(on ) l i mit e d drain current, i d (a)
UTM4052 power mosfet unisonic technologies co., ltd 7 of 9 www.unisonic.com.tw qw-r502-137.e ? typical characteristics(cont.) p-channel normalizedtransient thermal resistance r ds(o n ) limited drain current, -i d (a)
UTM4052 power mosfet unisonic technologies co., ltd 8 of 9 www.unisonic.com.tw qw-r502-137.e ? typical characteristics(cont.) power dissipation, p d (w)
UTM4052 power mosfet unisonic technologies co., ltd 9 of 9 www.unisonic.com.tw qw-r502-137.e utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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